论文著作:
[1] LUO DAWEI*, YANG QIAN, LI JUNFENG, LONG JIANPING.Research and preparation of high quality and high utilization polycrystalline silicon ingot. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,Vol.17,No.5-6,MayJune 2015,p.839-845.
[2] D. W. Luo* and J. P. Long, Formation and distribution of silicon carbide(SiC) precipitates in industrial directional solidification of mc-Si ingots. Materials Research Innovations, 2014, VOL 18 NO 2: 99-103. ISSN: 1432–8917.
[3] Dawei Luo*, junfeng Liand jianping Long, Research and Preparation of High Quality Polysilicon Ingots and Multicrystalline Silicon (mc-Si) Cells: Materials Science Forum Vol. 814 (2015) pp 345-350.
[4] Da-wei Luo*,Growth and Characterization of 420 kg Bulk Multicrystalline Silicon(mc-Si) Ingot Grown by Directional Solidification Process for Photovoltaic Application, Advanced Materials Research,873,592-597,2014.
[5] Luo Dawei*, Liu Ning, Lu Yi ping, hang Guo Liang,Li Ting ju,Removal of Boron from Metallurgical Grade Silicon by Electromagnetic Induction Slag Melting, Transactions of Nonferrous Metals Society of China,21(5),1178-1184, 2011.
[6] Luo Dawei*, Liu Ning, Lu Yiping, Zhang Guoliang, Li Tingju, Removal of impurities from metallurgical grade silicon by electron beam melting, Journal of Semiconductors.32(3), 033003-5, 2011.
[7] Dawei Luo*, Yiping Lu, Ning Liu, Tingju Li, Guoliang Zhang, Purification of metallurgical grade silicon (MG-Si) by acid leaching, Journal of Dalian University of Technology,52(1),40-46,2012.
[8] Gao Zijie, Luo Dawei*. Comparative study on removal of metallurgical silicon impurities by different acid leaching methods [J]. Physicochemical Problems of Mineral Processing, 2023, 59(2): 162331.
[9] Gao Zijie, Luo Dawei*, Chen Jianghua, et al. Removal of impurities from Metallurgical silicon by adding ZnO and BaO to the CaO–SiO2 slag system [J]. Materials Science in Semiconductor Processing, 2024, 170: 107974.
[10] Jianghua Chen, Dawei Luo*, Zijie Gao, Ke Rong, Jiabao Deng. Preparation of silicon Fertilizer using lithium pyroxene acid-leaching residues as starting materials [J]. JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2023, 10.1007/s11595.
[11] Bai J Z, Luo D W*, Zhang Y, et al. Flotation Application of Cationic and Mixed Anionic Collectors in Hanzhong Quartz Ore[J]. Journal of Mining Science, 2023, 59(4): 681-686.
[12] Rong, K., Luo, D.*, Deng, J. et al. Study on the process of oxidation resistance composite coating on graphite electrode by dipping method[J]. Journal of the Australian Ceramic Society, 60, 763–776 (2024). 10.1007/s41779-024-01014-w.
[13] Deng J, Luo D*, Bai J, et al. Effect of ultrasonic pretreatment on flotation purification of quartz[J]. Physicochemical Problems of Mineral Processing, 2024, 60.
[14] Deng J, Luo D*, Rong K. Sustainable route for silica preparation from silica fume[J]. Environmental Technology, 2024: 1-11.
发明专利:
[1] 路忠林,林洪峰,盛雯婷,张凤鸣。低碳准单晶铸锭炉及应用该铸锭炉进行铸锭的方法.中国发明专利, ZL 201210194736.8. 2015-04-15. 授权(证书号1633635)
[2] 林洪峰,张凤鸣,王临水, 路忠林。制备高利用率准单晶的组合式护板及其制备准单晶的方法. 中国发明专利, ZL 201210310852.1. 2014-12-03. 授权(证书号:1530526)
[3] 林洪峰,张凤鸣,王临水,路忠林。一种铸锭坩埚及铸锭装置. 中国发明专利, ZL 201210310772.6. 2014-02-11. 授权(证书号:1583144 )
[4] 林洪峰,张凤鸣,王临水,路忠林。一种用于铸锭坩埚的复合式护板. 中国发明专利, ZL 201210312319.9. 2015-06-10. 授权(证书号:1691897)
[5] 林洪峰,张凤鸣,王临水,路忠林。一种铸锭用坩埚的底座. 中国发明专利, ZL 201210312242.5. 2015-01-21. 授权(证书号:1572163)
[6] 李凛,周世一,龙剑平。一种精炼工业硅制备太阳能级硅的方法. 中国发明专利, ZL 201510675040.0. 2017-08-25. 授权(证书号:2589048)
[7] 汪锐,黄舰。一种用于制备高纯石墨的天然晶质石墨精粉活化方法。专利号:ZL2020 1 0022722.2。授权(证书号:5067724)
[8] 汪锐,黄舰。一种用于制备高纯石墨的天然晶质鳞片石墨精粉处理方法。专利号:ZL 2020 1 0023524.8。授权(证书号:4951385)
[9] 汪锐,黄舰。一种天然石墨制备高纯石墨的方法。专利号:ZL2020 1 0023601.X。授权(证书号:5257566)
[10] Ke Rong, Zijie Gao, Jiabao Deng. METHOD FOR REMOVING PHOSPHORUS AND BORON IMPURITY FROM INDUSTRIAL SILICON MELT BY SECONDARY REFINING[P], US 11,807,538 B1,2023-11-07.
[11] 高子杰,邓佳宝等。一种炉外精炼去除工业硅熔体中磷、硼杂质的方法。专利号:ZL 2022 1 0463712.1。授权(证书号:5906129)
[13] 白俊哲,荣科等。一种制备低铁铝钙含量硅的方法。专利号:ZL2022 1 0463862.2。授权(证书号:6018138)
[14] 张煜,荣科等。一种采用无机锌盐去除硅中杂质的方法。专利号:ZL2022 1 0463853.3。授权(证书号:5915984)
[15] 陈江华,邓家宝等。一种用于工业硅炉外精炼的三元造渣剂及其除杂方法。专利号:ZL202210472531.5。授权(证书号:5906129)
[16] 王思忆,曾林等。一种以硅灰为原料制备高纯二氧化硅的方法。专利号::ZL 2022 1 0374168.3。授权(证书号:5915230)