论文著作:
81. Muhammad Zahid Saleem, Liping Feng,* Pengfei Liu*, Ruotong Ban, et al. Construction of BiOBr Nanoarrays on nitrogen-doped carbon skeleton as anode for Co//Bi aqueous rechargeable alkaline battery. Electrochimica Acta. 2026, 545: 147724
80. Yulong Yang, Liping Feng*, Lingfeng Jia, et al. Control of conduction polarity of BiOBr single crystal via chemical potential modulation CVD. Science China Materials. 2025, 68(11): 4006-4015.
79. Xiao Yu, Liping Feng*, Lingfeng Jia, et al. High-Performance p-Type Field-Effect Transistor Based on WS2 Monolayer Prepared by Liquid-Phase-Assisted Space-Confined CVD. ACS Materials Letters, 2025, 7: 2749-2757.
78. Xiaoqi Zheng, Xitong Wang, Liping Feng*, Ruotong Ban, et al. Enhancing photocatalytic nitrogen fixation at the Bi/BiOBr triphase interface through hydrophobic carbon fiber modification. International Journal of Hydrogen Energy. 2025, 178: 151678
77. Xitong Wang, Yan Li, Liping Feng*, et al. Construction of BiOBr/Hydrophobic Carbon Cloth Heterojunction with Internal Electric Field for Enhanced Photocatalytic Nitrogen Fixation. Small. 2025, 21: e03853.
76. Shehbaz Ahmed, Liping Feng*, Ruotong Ban, Zhilin Chen. Synthesis of Novel BiOBr Photocatalyst with three Distinct Morphologies for the Photodegradation of Rhodamine B Dye. Catalysis Letters. 2025, 155: 324.
75. Pengfei Liu, Liping Feng*, Xiaodong Zhang, et al. Bottom-up growth of high-quality BiOCl twisted homostructures via a precursor regulation strategy. Materials Today, 2024, 80: 40-49.
74. Xiaoqi Zheng, Xitong Wang, Liping Feng*, et al. In Situ Fabrication of 2D-2D Bi/BiOBr Ohmic Heterojunction for Enhanced Photocatalytic Nitrogen Fixation. ACS Appl. Mater. Interfaces, 2024, 16, 62107-62120.
73. Jiahui Li, Liping Feng*, He Zhang, et al. Properties of Cr–C films prepared by multi-point magnetron co-sputtering on 316L stainless steel using as bipolar plates for PEMFCs. International Journal of Hydrogen Energy, 2024, 69:1377-1385.
72. Xitong Wang, Xiaoqi Zheng, Liping Feng*, Yuhan Yao, Chunhai Wang*, Xiaodong Zhang, Pengfei Liu, Yulong Yang, Guangzhi Dong*. Construction of BiOI-FTO devices with outstanding photocatalytic nitrogen fixation performance. Materials Today Chemistry, 2024,37:101981.
71. Xiaodong Zhang, Liping Feng*, Shichen Zhong, Yuanming Ye, Haixi Pan, et al. Schottky barrier heights and mechanism of charge transfer at metal-Bi2OS2 interfaces. Science China Materials, 2023, 66(2): 811-818.
70. Xiaodong Zhang, Liping Feng*, Huanyong Li*, Yifan Liu, Pengfei Liu, Xiaoqi Zheng, Mingyang Qu, Xitong Wang, Jun He*. Realization of Fermi level unpinning and high-quality p-type contacts for 2D β-TeO2 by a built-in intercalation. Materials Today Nano. 2023, 24: 100392.
69. Pengfei Liu, Xiaodong Zhang, Liping Feng*, Shichen Zhong, Yuanming Ye, et al. Controllable Synthesis of Novel Two-Dimensional Nonlayered beta-Bi2Te4O11 Flakes for Promising Optoelectronic Applications. Chemistry of Materials, 2022, 34(19): 8905-8916
68. Haixi Pan, Liping Feng*, Pengfei Liu, Xiaoqi Zheng, Xiaodong Zhang. Asymmetric surfaces endow Janus bismuth oxyhalides with enhanced electronic and catalytic properties for the hydrogen evolution reaction. Journal of Colloid and Interface Science, 2022, 617: 204-213.
67. Xiaodong Zhang, Liping Feng, Haixi Pan, Xin Zhang, Hongliang Zhang, Guangzhi Dong. Surface-engineered Mo2C: an ideal electrode for 2D semiconductorbased complementary circuit with Schottky-barrier-free contacts. Materials Today Chemistry, 2022, 24: 100790.
66. Haixi Pan, Liping Feng*, Siwei Liu, Zetian Li, Huitian Guo, et al. Activating and modulating inert basal planes of BiOX (X 1/4 I, Br, and Cl) for hydrogen evolution reaction. International Journal of Hydrogen Energy, 2022, 47(3): 1683-1691.
65. Xiaoqi Zheng, Liping Feng, Yewei Dou, et al. High Carrier Separation Efficiency in Morphology Controlled BiOBr/C Schottky Junctions for Photocatalytic Overall Water Splitting. ACS nano, 2021, 15(8): 13209-13219.
64. Pengfei Liu, Xiaodong Zhang, Liping Feng, et al. In situ growth of 2D BiOI precursors on a porous conductive framework for a high performance bismuth based aqueous battery. Journal of Materials Chemistry A, 2021, 9(27): 15472-15481.
63. Pengfei Liu, Lei Yin, Liping Feng, et al. Controllable preparation of ultrathin 2D BiOBr crystals for high-performance ultraviolet photodetector. Science China Materials, 2021, 64(1):189-197.
62. Jian Jiang, Yao Wen, Hao Wang, et al. Recent Advances in 2D Materials for Photodetectors. Advanced Electronic Materials, 2021, 7(7): 2001125.
61. Wei Zeng, Liping Feng, Yaochen Yu, et al. Investigation of the layer-dependent optical properties of ultrathin BiOI by spectroscopic ellipsometry. Journal of Alloys and Compounds, 2021, 850: 156676.
60. Lingan Kong, Xiaodong Zhang, Quanyang Tao, et al. Doping-free complementary WSe2 circuit via van der Waals metal integration. Nature Communications, 2020, 11(1): 1866.
59. Ruiqing Cheng, Lei Yin, Feng Wang, et al. Anti-Ambipolar Transport with Large Electrical Modulation in 2D Heterostructured Devices. Advanced Materials, 2019, 31(24):1901144.
58. Wei Zeng, Jie Li,Liping Feng, et al. Synthesis of large-area atomically thin BiOI crystals with highly sensitive and controllable photodetection. Advanced Functional Materials, 2019, 29(16): 1900129.
57. Junjun Wang, Feng Wang, et al. Controlling Injection Barriers for Ambipolar Two-Dimensional Semiconductors via Quasi-van der Waals Contacts. Advanced Science, 2019,6(11):1801841.
56. Wei Zeng, Liping Feng, Jie Li, Haixi Pan, et al. Synthesis of Millimeter-Size Single-Crystal 2D BiOI Sheets and Ribbons on Mica. Chemistry of Materials, 2019, 31(23): 9715-9720.
55. Hanxi Pan, Liping Feng, Wei Zeng, et al. Active Sites in Single-Layer BiOX (X = Cl, Br, and I) Catalysts for the Hydrogen Evolution Reaction. Inorganic Chemistry, 2019, 58(19): 13195-13202.
54. Ningning Li, Yao Wen, Ruiqing Cheng, et al. Strongly coupled van der Waals heterostructures for high-performance infrared phototransistor. Applied Physics Letters, 2019, 114(10): 103501.
53. Li J, Wang Z, Wen Y, et al. High-performance near-infrared photodetector based on ultrathin Bi2O2Se nanosheets. Advanced Functional Materials, 2018, 28(10): 1706437.
52. Jiang B, Zou X, Su J, et al. Impact of thickness on contact issues for pinning effect in black phosphorus field-effect transistors. Advanced Functional Materials, 2018: 1801398.
51. Feng L P, Li A, Wang P C, et al. Novel two-dimensional semiconductor SnP3 with high carrier mobility, good light absorption, and strong interlayer quantum confinement. The Journal of Physical Chemistry C, 2018, 122(42): 24359-24367.
50. Zeng W, Feng L P, Su J, et al. Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films. Journal of Alloys and Compounds, 2018, 745: 834-839.
49. Feng L, Sun H, Li A, et al. Influence of Mo-vacancy concentration on the structural, electronic and optical properties of monolayer MoS2: A first-principles study. Materials Chemistry and Physics, 2018, 209: 146-151.
48. Chu J, Wang F, Yin L, et al. High-performance ultraviolet photodetector based on a few-layered 2D NiPS3 nanosheet. Advanced Functional Materials, 2017, 27(32): 1701342.
47.Su J, Feng LP, Zeng W, et al. Controlling the electronic and geometric structures of 2D insertions to realize high performance metal/insertion-MoS2 sandwich interfaces. Nanoscale, 2017, 9(22):7429-7441.
46. Su J, Feng LP, Zheng XQ, et al. A Promising Approach for High Performance of MoS2 Nanodevice: Doping the BN Buffer Layer to Eliminate the Schottky Barriers, ACS Applied Materials & Interfaces, 2017, 9: 40940-40948.
45. Su J, Feng LP, Liu SY, et al. Non-invasively improving the Schottky barriers of metal-MoS2 interfaces: effects of atomic vacancies in a BN buffer layer. Physical Chemistry Chemical Physics, 2017, 19(31): 20582-20592.
44. Su J, Feng LP, Zhang Y, et al. Defect induced gap states in monolayer MoS2 control the Schottky barriers of Pt-mMoS2 interfaces. Applied Physics Letters, 2017, 110(16):161604.
43. Feng LP, Su J, Liu ZT. Characteristics of lateral and hybrid heterostructures based on monolayer MoS2: a computational study. Physical Chemistry Chemical Physics, 2017, 19(6):4741-4750.
42. Su J, Feng LP, Zhang Y, et al.Schottky barrier engineering via adsorbing gases at the sulfur vacancies in the metal-MoS2 interface. Nanotechnology, 2017, 28(10):105204.
41. Feng LP, Jiang WZ, Su J, et al. Performance of field-effect transistors based on NbxW1-xS2 monolayers. Nanoscale, 2016, 8(12):6507-6513.
40. Su J, Feng LP, Zhang Y, et al. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures. Physical Chemistry Chemical Physics, 2016, 18(25):16882-16889.
39. Su J, Feng LP, Zeng W, et al. Designing high performance metal-mMoS2 interfaces by two-dimensional insertions with suitable thickness. Physical Chemistry Chemical Physics, 2016, 18(45):31092-31100.
38. Su J, Feng LP, Pan HX, et al. Modulating the electronic properties of monolayer MoS2 through heterostructure with monolayer gray arsenic. Materials & Design, 2016, 96:257-262.
37. Li N, Feng LP, Li DP, et al. Optical and electrical properties of Al-WS2, films via H2S sulfurization of Al-WOx. Materials & Design, 2016, 92:129-134.
36. Su J, Feng LP, Liu ZT. Heterostructure consists of monolayer MoS2 and arsenene with novel electronic and optical conductivity. RSC Advances, 2016, 6(64):59633-59638.
35. Li N, Feng LP, Su J, et al. Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and Vulcanization. RSC Advances, 2016, 6(69):64879-64884.
34. Li N, Liu ZT, Feng LP, et al. Composition and optoelectrical properties of sputtering MoSex films. Surface Engineering, 2016, 32(4):299-303.
33. Tian H, Feng LP, Liu ZT. Theoretical calculations on electronic structure and optical properties of orthorhombic SrHfO3 in Cmcm space group. Rare Metal Materials & Engineering, 2016, 45(4):881-883.
32. Feng LP, Su J, Liu ZT. Computational study of hafnium metal contacts to monolayer WSe2. Journal of Alloys and Compounds, 2015, 639: 210-214.
31. Feng LP, Su J, Li DP, et al. Tuning the electronic properties of Ti-MoS2 contacts through introducing vacancies in monolayer MoS2. Physical Chemistry Chemical Physics, 2015, 17(10): 6700-6704.
30. Li N, Liu ZT, Feng LP, et al. Effect of substrate temperature on the electrical characteristics of MoSex thin films and back-gated MoSex transistors. Journal of Alloys and Compounds, 2015, 623: 209-212.
29. Li N, Su J, Feng LP, et al. Composition and optical properties of amorphous Al-MoSexOy thin films and electrical characteristics of Al-MoSexOy field effect transistors. Vacuum, 2015, 121: 42-47.
28.Su J, Liu ZT, Feng LP, et al. Effect of temperature on thermal properties of monolayer MoS2 sheet. Journal of Alloys and Compounds, 2015, 622: 777-782.
27. Su J, Li N, Zhang YY, et al. Role of vacancies in tuning the electronic properties of Au-MoS2 contact. AIP Advances, 2015, 5(7), 077182.
26. Su J, Zhang Y, Hu Y, et al. Tuning the electronic properties of bondings in monolayer MoS2 through (Au,O) co-doping. RSC Advances, 2015, 5(83): 68085-68091.
25. Feng LP, Su J, Liu ZT. Effect of vacancies in monolayer MoS2 on electronic properties of Mo-MoS2 contacts. RSC Advances, 2015, 5(26): 20538-20544.
24. Feng LP, Su J, Liu ZT. Effect of vacancies on structural, electronic and optical properties of monolayer MoS2: A first-principles study. Journal of Alloys and Compounds, 2014, 613: 122-127.
23. Chen S, Liu ZT, Feng LP, et al. Photo luminescent properties of Ce-doped HfOxNy thin films prepared by magnetron sputtering. Applied Surface Science, 2014, 320: 699-702.
22. Feng LP, Su J, Chen S, et al. First-principles investigations on vacancy formation and electronic structures of monolayer MoS2. Materials Chemistry and Physics, 2014, 148(1-2): 5-9.
21. Feng LP, Jia RT, Liu ZT. First-Principles Study of Electronic Structure of Orthorhombic SrHfO3 under Pressure. Rare Metal Materials and Engineering, 2014, 43(11): 2619-2622.
20. Tian H, Feng LP, Liu ZT. Effect of N2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering. Vacuum, 2014, 109: 139-143.
19. Chen S, Liu ZT, Feng LP, Zhao XR. Photoluminescent properties of undoped and Ce-doped HfO2 thin films prepared by magnetron sputtering. Journal of Luminescence,2014, 153: 148-151.
18. Meng YQ, Liu ZT, Feng LP, Chen S. Influence of Rapid Thermal Annealing on the Structure and Electrical Properties of Ce-Doped HfO2 Gate Dielectric. Chinese Physics Letters, 2014, 31(7), 077702.
17. Feng LP, Li N, Liu ZT. Effect of radio frequency power on composition, structure and optical properties of MoSex thin films. Physica B-Condensed Matter, 2014, 444: 21-26.
16. Chen S, Liu ZT, Feng LP, Che XS, Zhao XR. Effect of ytterbium inclusion in hafnium oxide on the structural and electrical properties of the high-k gate dielectric. Journal of Rare Earths, 2014, 32(6): 580-584.
15. Feng LP, Wang ZQ, Liu ZT. First-principles calculations on mechanical and elastic properties of 2H- and 3R-WS2 under pressure. Solid State Communications, 2014, 187(6):43-47.
14. Feng LP, Li N, Yang MH, et al. Effect of pressure on elastic, mechanical and electronic properties of WSe2: A first-principles study. Materials Research Bulletin, 2014, 50: 503-508.
13. Chen S, Liu ZT, Feng LP, Che XS. Influence of cerium-doping on the structural and electrical properties of hafnium oxide gate dielectric. Journal of Materials Science-Materials in Electronics, 2014, 25(2): 749-753.
12. Feng LP, Li N, Yang MH, et al. Effect of pressure on elastic, mechanical and electronic properties of WSe2: A first-principles study. Materials Research Bulletin, 2014, 50(2):503-508.
11. Feng LP, Li N, Tian H, et al. Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering. Journal of Materials Science, 2014, 49(4): 1875-1881.
10. Chen S, Liu ZT, Feng LP, et al. The dielectric properties enhancement due to Yb incorporation into HfO2. Applied Physics Letters, 2013, 103(13): 6466-1.
9. Liping Feng, Zhiqiang Wang, Zhengtang Liu. First-principles calculations on electronic, chemical bonding and optical properties of cubic Hf3N4. Communications in Theoretical Physics. 2013, 59:105-109 (IF=0.957)
8. Liping Feng, Zhengtang Liu, Qijun Liu. Influence of RF power on structure and electrical properties of sputtered SrHfON thin films. Materials Letters. 2012, 78: 66-68(IF=2.489)
7. Liping Feng, Yinquan Wang, Hao Tian, et al. Effect of annealing on composition, structure and optical properties of SrHfON thin films. Applied Surface Science, 2012, 258: 9706-9710 (IF=2.711)
6. Liping Feng, Zhengtang Liu, Qijun Liu. Structural, elastic and mechanical properties of orthorhombic SrHfO3 under pressure from first-principles calculations. Physica B. 2012, 407: 2009-2013 (IF=1.327)
5. Liping Feng, Zhiqiang Wang, Qijun Liu, et al. Influence of pressure on structural, electronic and mechanical properties of cubic SrHfO3:A First-principles study. Chinese Physics Letters. 2012, 29:127103 (IF=1.031)
4. Liping Feng, Zhengtang Liu, Qijun Liu, et al. First-principles Study of Electronic and Optical Properties of Pbnm Orthorhombic SrHfO3. Computational Materials Science, 2010, 50: 454-458. (IF=1.574)
3. Liping Feng, Zhengtang Liu, Bing Xu. Ab initio modeling of electronic and optical properties of hafnium silicates. Computational Materials Science, 2009, 44(3): 929-932 (IF=1.574)
2. Liping Feng, Zhengtang Liu, Yaming Shen. Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics. Vacuum, 2009, 83(5): 902-905 (IF=1.53)
1. Liping Feng, Zhengtang Liu. Structural and electrical properties of thin SrHfON films for high-k gate dielectric. Applied Physics Letters. 2009, 94 (25): 252907-1-3 (IF=3.844)