发明专利:
1.一种四氧化三钴介孔纳米片的制备方法、中国, ZL201510063979.1
2.一种金属氧化物半导体纳米材料的制备方法、中国, ZL201510063979.1
3.一种金属氧化物半导体纳米材料的制备方法、中国, ZL201310045571.2
4.一种高比表面积介孔纳米片状氧化锌粉体的制备方法、中国, ZL201310047042.6
5.Twin-connected Structure of ZnO Rod Crystals, Twin-connected Film and Method of Manufacturing Twin-connected Film, 日本,P5669048
6.ZnO Whisker Pattern and Method of Manufacturing Same,日本,P5540365
7.Zn(OH)2 Nano-sheet / ZnO Nano-whisker Hybrid Film, ZnO Nano-sheet / ZnO Nano-whisker Hybrid Film and Method of Manufacturing Same,日本,P5339372
8.ZnO Whisker Film, Seed Layer for ZnO Whisker and Method of Manufacturing Same,日本,P5136982