新材料

铁电、多铁电子信息材料与器件
电介质物理
多场耦合微观机制

[34] J. L. Pang, T. P. Duan, M. Liao, L. M. Jiang, Y. C. Zhou, Q. Yang*, J. J. Liao*, and J. Jiang*, The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation, npj Flexible Electronics 9(1), 7 (2025)
[33] W. L. Zhang, X. M. Mou, Y. P. Ma, Y. Zheng, S. X. Wang, L. Shu, Z. W. Du, C. G. Deng, Q. Yang*, R. Yu*, J.-F. Li*, and Q. Li*, Phase coexistence induced giant dielectric tunability and electromechanical response in PbZrO3 epitaxial thin films, Small 2410260 (2025)
[32] S. A. Yan, P. Xu, G. Li, Y. C. Li, Y. F. Zhu*, X. N. Zhu, Q. Yang, M. Li, M. H. Tang*, H. L. Lu*, S. Liu, Q. J. Li, D. W. Zhang, and Z. G. Chen, Artificial intelligence-driven phase stability evaluation and new dopants identification of hafnium oxide-based ferroelectric materials, npj Computational Materials 11, 2 (2025)
[31] Z. J. Wu, T. P. Duan, Z. H. Tian, Y. H. Jiang, Y. C. Zhou, J. Jiang*, and Q. Yang*, Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier, Applied Physics Letters 125, 112903 (2024)
[30] T. P. Duan, Y. Zhang, J. Jiang, J. M. Pang*, M. Liao*, and Q. Yang*, Ferroelectric-controlled magnetoelectric effect at the CrI3/HfO2 interface, Physical Review B 110, 054407 (2024)
[29] J. H. Wang, T. P. Duan, J. J. Liao*, Z. P. Wang, X. R. Huang, S. J. Jia, K. Y. Bao, Y. X. Fan, B. J. Zeng, L. M. Jiang, M. Liao, Y. C. Zhou, Q. Yang*, and J. Jiang*, Flexible and wake-up free Hf0.5Zr0.5O2 ferroelectric thin films with ultra-low operation voltage and high polarization, Journal of Advanced Ceramics 13(11), 1844-1851 (2024)
[28] B. J. Zeng , L. Y. Yin, R. P. Liu, C. F. Ju, Q. H. Zhang, Z. B. Yang, S. Z. Zheng, Q. X. Peng, Q. Yang, Y. C. Zhou, and M. Liao, Multiple polarization states in Hf1-xZrxO2 thin films by ferroelectric and antiferroelectric coupling, Advanced Materials 2411463 (2024)
[27] L. Yin, X. Y. Li, D. D. Xiao*, S. J. He, Y. Zhao, Q. X. Peng, Q. Yang, Y. Y. Liu*, and C. B. Wang*, Improved ferroelectricity and endurance in Ca doped Hf0.5Zr0.5O2 films, Ceramics International 50, 49577–49586 (2024)
[26] Y. Wu, Y. K. Zhang, J. Jiang, L. M. Jiang, M. H. Tang, Y. C. Zhou, M. Liao*, Q. Yang*, and E. Y. Tsymbal*, Unconventional polarization-switching mechanism in (Hf, Zr)O2 ferroelectrics and its implications, Physical Review Letters 131, 226802 (2023)
[25] Z. F. Liu, P. F. Hou, L. Z. Sun, E. Y. Tsymbal, J. Jiang*, and Q. Yang*, In-plane ferroelectric tunnel junctions based on 2D α-In2Se3/semiconductor heterostructures, npj Computational Materials 9(1), 6 (2023)
[24] K. Ouyang, T. P. Duan, W. Q. Huang, Q. Zhan, P. Chen, L. M. Jiang, L. Z. Sun, Y. C Zhou, J. J. Liao*, Q. Yang*, and J. Jiang*, Large-scale, high-transparency, ultra-thin ITO membranes with robust conductivity and flexibility, Acta Materialia 260, 119334 (2023)
[23] S. T. Mo, K. M. Feng, J. L. Pang, K. Ouyang, L. M. Jiang, Q. Yang*, B. Zhang*, and J. Jiang*, All-inorganic transparent Hf0.85Ce0.15O2 ferroelectric thin films with high flexibility and stability, Nano Research 16(4), 5065–5072 (2023)
[22] K. Y. Bao, J. J. Liao*, F. Yan, S. J. Jia, B. J. Zeng, Q. Yang, M. Liao, and Y. C. Zhou*, Enhanced endurance and imprint properties in Hf0.5Zr0.5O2-δ ferroelectric capacitors by tailoring the oxygen vacancy, ACS Applied Electronic Materials 5(8), 4615–4623 (2023)
[21] L. Liu, K. Ouyang, Z. Y. Chen, S. T. Mo, Q. X. Peng, L. M. Jiang, Z. Y. Huang, H. T. Qu, Q. Yang*, and J. Jiang*, Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer, Journal of Materials Science 57(41), 19371–19380 (2022)
[20] Z. J. Chen, Q. Yang*, L. L. Tao*, and E. Y. Tsymbal*, Reversal of the magnetoelectric effect at a ferromagnetic metal/ferroelectric interface induced by metal oxidation, npj Computational Materials 7, 204(1–7) (2021)
[19] A. Dmitriyeva, V. Mikheev, S. Zarubin, A. Chouprik, G. Vinai, V. Polewczyk, P. Torelli, Y. Matveyev, C. Schlueter, I. Karateev, Q. Yang, Z. J. Chen, L. L. Tao, E. Y. Tsymbal*, and A. Zenkevich*, Magnetoelectric coupling at the Ni/Hf0.5Zr0.5O2 interface, ACS Nano 15 (9), 14891–14902 (2021)
[18] C. Huang, Y. K. Zhang, S. Z. Zheng, Q. Yang*, and M. Liao*, Interface effects induced by a ZrO2 seed layer on the phase stability and orientation of HfO2 ferroelectric thin films: A first-principles study, Physical Review Applied 16, 044048(1–9) (2021)
[17] Q. Chen, Y. K. Zhang. W. Y. Liu, J. Jiang*, Q. Yang*, and L. M. Jiang*, Ferroelectric switching behavior of nanoscale Hf0.5Zr0.5O2 grains, International Journal of Mechanical Sciences 212 (15), 106828 (1–9) (2021)
[16] W. T. Ding, Y. K. Zhang, L. L. Tao, Q. Yang*, and Y. C. Zhou*, The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study, Acta Materialia 196, 556–564 (2020)
[15] Y. K. Zhang, Q. Yang*, L. L. Tao, E. Y. Tsymbal*, and V. Alexandrov*, Effects of strain and film thickness on the stability of the rhombohedral phase of HfO2, Physical Review Applied 14, 014068(1–8) (2020)
[14] W. Y. Liu, J. J. Liao, J. Jiang*, Y. C. Zhou*, Q. Chen, S. T. Mo, Q. Yang, Q. X. Peng, and L. M. Jiang, Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions, Journal of Materials Chemistry C 8, 3878–3886 (2020)
[13] Q. Yang*, L. L. Tao, Y. K. Zhang, M. Li, Z. Jiang, E. Y. Tsymbal*, and V. Alexandrov*, Ferroelectric tunnel junctions enhanced by a polar oxide barrier layer, Nano Letters 19, 7385–7393 (2019)
[12] Q. Yang*, L. L. Tao, Z. Jiang, Y. C. Zhou, E. Y. Tsymbal*, and V. Alexandrov*, Magnetoelectric effect at the Ni/HfO2 interface induced by ferroelectric polarization, Physical Review Applied 12, 024044(1–7) (2019)
[11] P. Fan, Y. K. Zhang, Q. Yang*, J. Jiang, L. M. Jiang, M. Liao, and Y. C. Zhou*, Origin of the intrinsic ferroelectricity of HfO2 from ab initio molecular dynamics, Journal of Physical Chemistry C 123, 21743–21750 (2019)
[10] Y. Zhou, Y. K. Zhang, Q. Yang*, J. Jiang, P. Fan, M. Liao, and Y. C. Zhou*, The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle, Computational Materials Science 167, 143–150 (2019)
[9] J. Jiang, Q. Yang, Y. Zhang, X. Y. Li, P. W. Shao, Y. H. Hsieh, H. J. Liu, Q. X. Peng, G. K. Zhong, X. Q. Pan, Y. H. Chu*, and Y. C. Zhou*, Self-assembled ferroelectric nanoarray, ACS Applied Materials & Interfaces 11, 2205–2210 (2019)
[8] X. Y. Li, Q. Yang*, J. X. Cao, L. Z. Sun, Q. X. Peng*, Y. C. Zhou, and R. X. Zhang, Domain wall motion in perovskite ferroelectrics studied by the nudged elastic band method, Journal of Physical Chemistry C 122, 3091–3100 (2018)
[7] J. L. Peng, D. L. Shan, Y. Y. Liu*, K. Pan, C. H. Lei, N. B. He, Z. Y. Zhang, and Q. Yang, A thermodynamic potential for barium zirconate titanate solid solutions, npj Computational Materials 4, 66 (2018)
[6] Q. Yang, J. X. Cao*, Y. C. Zhou*, L. Z. Sun, and X. J. Lou, Dead layer effect and its elimination in ferroelectric thin film with oxide electrodes, Acta Materialia 112, 216–223 (2016)
[5] J. S. Zhen, Q. Yang*, Y. H. Yan, X. W. Jiang, S. A. Yan, W. Chen, and X. Q. Guo, Molecular dynamics study of structural damage in amorphous silica induced by swift heavy-ion radiation, Radiation Effects and Defects in Solids 171, 340–349 (2016)
[4] L. M. Jiang, Y. C. Zhou*, Y. Zhang, Q. Yang, Y. Gu, and L. Q. Chen, Polarization switching of the incommensurate phases induced by flexoelectric coupling in ferroelectric thin films, Acta Materialia 90, 344–354 (2015)
[3] Q. Yang, J. X. Cao*, Y. C. Zhou*, Y. Zhang, Y. Ma, and X. J. Lou, Tunable oxygen vacancy configuration by strain engineering in perovskite ferroelectrics from first-principles study, Applied Physics Letters 103, 142911(1–5) (2013)
[2] Q. Yang, J. X. Cao*, Y. Ma*, Y. C. Zhou, L. M. Jiang, and X. L. Zhong, Strain effects on formation and migration energies of oxygen vacancy in perovskite ferroelectrics: A first-principles study, Journal of Applied Physics 113, 184110(1–5) (2013)
[1] Q. Yang, J. X. Cao*, Y. Ma, Y. C. Zhou*, X. J. Lou, and J. Yang, Interface effect on the magnitude and stability of ferroelectric polarization in ultrathin PbTiO3 films from first-principles study, Journal of Applied Physics 114, 034109(1–6) (2013)

1、国家自然科学基金面上项目，2021/01-2024/12，主持；
2、湖南省自然科学基金优秀青年项目，2021/01-2023/12，主持；
3、湖南省教育厅重点项目，2021/9-2024/12，主持。